Scanning tunnelling microscopy and spectroscopy of nanocrystalline silicon films
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چکیده
منابع مشابه
Scanning tunnelling microscopy and spectroscopy of MgB2
Experiments of the scanning tunnelling microscopy and spectroscopy (STM/STS) have been carried out on the layered superconductor MgB2 with Tc = 39 K. The measurements were done at 5 K using a Pt-Ir tip and the single-crystal grain. The STM images show characteristic hexagonal patterns with the distances of nearest neighbour atoms to be 0.3 – 0.35 nm and 0.15 – 0.2 nm, respectively, which are co...
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Considerable progress has been made recently, using scanning tunnelling microscopy (STM), scanning tunnelling spectroscopy (STS) and local density functional theory (DFT), in examining the atomic structure and electronic properties of ultrathin insulating films. This article reviews pertinent results to date with special emphasis on ultrathin MgO films on Ag(001) surfaces. Using STS, the layer-...
متن کاملSpin-polarized Scanning Tunnelling Microscopy of Ultrathin Films
Using low temperature spin-polarized scanning tunneling microscopy we have studied the morphology and magnetic properties of ultrathin Fe(0.5 ML)Au(0.5 ML) nanowires prepared on a Mo(110) single crystal. The Fe nanostripes grown by step flow on a Mo(110) at 700 K were covered by Au at RT, and subsequently annealed at 700 K. Differences in the morphology of Au on Fe(110)/Mo(110) and clean Mo(110...
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Suspended graphene has been studied by STM for the first time. Atomic resolution on mono- and bi-layer graphene samples has been obtained after ridding the graphene surface of contamination via high-temperature annealing. Static local corrugations (ripples) have been observed on both types of structures.
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We review the topic of scanning tunnelling microscopy (STM) studies of silicides, with an emphasis on fundamental scientific issues that can be addressed using STM and ballistic-electron-emission microscopy (BEEM). The discussion is organized according to the topics of structure (atomic scale precursors, surface reconstructions, bulk structures, interfaces) kinetics and growth (direct atomic me...
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ژورنال
عنوان ژورنال: Semiconductor Science and Technology
سال: 2001
ISSN: 0268-1242,1361-6641
DOI: 10.1088/0268-1242/16/9/309